| PART |
Description |
Maker |
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET 350 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| NX3008CBKS NX3008CBKS-15 |
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
|
NXP Semiconductors
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| HGTP14N40F3VL |
19 A, 350 V, N-CHANNEL IGBT, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| SCVP0535N2 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
SUPERTEX INC
|
| FDC8602 |
Dual N-Channel PowerTrench? MOSFET 100 V, 1.2 A, 350 mΩ
100V Dual N-Channel PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| ISL9V3036D3ST ISL9V3036S3ST |
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT 21 A, 350 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| TP2535N3-G |
86 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 GREEN, TO-92(N3), 3 PIN
|
Supertex, Inc.
|
| NGD8205NT4G NGD8205AN NGD8205ANT4G NGD8205N12 |
Ignition IGBT 20 Amp, 350 Volt, N.Channel DPAK
|
ON Semiconductor
|
|
